SSM5G06FE 2014-03-01 1 silicon p-channel mos type / silicon epitaxial schottky barrier diode SSM5G06FE dc-dc converter applications ? combined a p-channel mosfet and a schottky barrier diode in one package. ? optimum for high-density mounting in small packages absolute maximum ratings (ta = 25c) mosfet characteristics symbol rating unit drain-source voltage v dss ?20 v gate-source voltage v gss 10 v dc i d ?100 drain current pulse i dp (note 2) ?200 ma power dissipation p d (note 1) 150 mw channel temperature t ch 150 c absolute maximum ratings (ta = 25c) sbd characteristics symbol rating unit maximum (peak) reverse voltage v rm 15 v reverse voltage v r 12 v average forward current i o 100 ma peak one cycle surge forward current (10ms) i fsm 1 (50 hz) a junction temperature t j 125 c absolute maximum ratings (ta = 25c) mosfet, sbd common characteristics symbol rating unit storage temperature range t stg ?55 to 125 c operating temperature range t opr (note3) ?40 to 100 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper ature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note1: total rating. mounted on an fr4 board. (25.4 mm 25.4 mm 1.6 mm, cu pad: 0.135 mm 2 5) unit: mm esv jedec ? jeita ? toshiba 2-2p1c weight: 3 mg (typ.) 0.20.05 1.20.05 1.60.05 1.00.05 1 2 0.5 0.5 3 1.60.05 0.120.05 5 4 0.550.05 1 gate 2 source 3 anode 4 cathode 5 drain 0.3 mm 0.45 mm start of commercial production 2002-08
SSM5G06FE 2014-03-01 2 note 2: the pulse width limited by max channel temperature. note 3: operating temperature limited by max channel temperat ure and max junction temperature. marking equivalent circuit handling precaution when handling individual devices (which are not yet mount ed on a circuit board), ensure that the environment is protected against static discharge. o perators should wear anti-st atic clothing and use containers and other objects that are made of anti- static materials. 5 1 3 kej 2 4 5 13 2 4
SSM5G06FE 2014-03-01 3 mosfet electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 10 v, v ds = 0 v ? ? 1 a drain-source breakdown voltage v (br) dss i d = ? 0.1 ma, v gs = 0 v ?20 ? ? v drain cut-off current i dss v ds = ? 20 v, v gs = 0 v ? ? ? 1 a gate threshold voltage v th v ds = ? 3 v, i d = ? 0.1 ma ?0.6 ? ? 1.1 v forward transfer admittance ? y fs ? v ds = ? 3 v, i d = ? 10 ma (note 4) 25 ? ? ms i d = ? 10 ma, v gs = ? 4 v (note 4) ? 6 8 i d = ? 10 ma, v gs = ? 2.5 v (note 4) ? 8 12 drain-source on-resistance r ds (on) i d = ? 1 ma, v gs = ? 1.5 v (note 4) ? 18 45 input capacitance c iss v ds = ? 3 v, v gs = 0 v, f = 1 mhz ? 11 ? pf reverse transfer capacitance c rss v ds = ? 3 v, v gs = 0 v, f = 1 mhz ? 3.7 ? pf output capacitance c oss v ds = ? 3 v, v gs = 0 v, f = 1 mhz ? 10 ? pf turn-on time t on ? 130 ? switching time turn-off time t off v dd = ? 3 v, i d = ? 10 ma, v gs = 0 to ? 2.5 v ? 190 ? ns note 4: pulse test switching time test circuit (a) test circuit (b) v in precaution v th can be expressed as voltage between gate and source when low operating current value is i d = -100 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consideration for using the device. v dd = ?3 v duty 1% v in : t r , t f < 5 ns (z out = 50 ) common source ta = 25c in 0 ? 2.5v 10 s v dd out 50 r l (c) v out t on 10% 90% ?2.5 v 0 v 90% 10% t off t r t f v ds ( on ) v dd
SSM5G06FE 2014-03-01 4 sbd electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit v f (1) i f = 1 ma ? 0.18 ? v v f (2) i f = 5 ma ? 0.23 0.30 v forward voltage v f (3) i f = 100 ma ? 0.35 0.50 v reverse current i r v r = 12 v ? ? 22 a total capacitance c t v r = 0 v, f = 1 mhz ? 20 40 pf precaution the schottky barrier diode in this device has large reverse cu rrent leakage compared to typical switching diodes. thus, excessive operating temperature or voltage may cause thermal runaway. to avoid this problem, be sure to take both forward and reverse loss into consideration.
SSM5G06FE 2014-03-01 5 mosfet i d - v gs -0.01 -0.1 -1 -10 -100 -1000 0 -1-2 -3-4 gate C s ource vol tage v gs (v) drain current i d (ma) common source v ds =- 3v pu lse test ta=100 25 -2 5 r ds(on) - ta 0 10 20 30 -25 0 25 50 75 100 125 150 ambient temperature ta ( ) drain C source on-resistance r ds( on) ( ? ) common source pulse test v gs =- 1.5v, i d =-1ma -2.5v,-10ma -4v,- 10m a vth - ta 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -25 0 25 50 75 100 125 150 ambient temperature ta ( ) gate threshold voltage vth (v) co mmon source i d =- 0.1m a v ds =-3v i d - v ds 0 -50 -100 -150 -200 -250 0 -0.5-1-1.5-2 drain C source voltage v ds (v) drain current i d (ma ) comm on s our ce ta=25 pulse test v gs = -1.5v -1.7 -1.9 -2.1 -2.3 -2.5 -2.7 -3 -4 -10 r ds( on ) - i d 0 10 20 30 40 -1 -10 -100 -1000 drain current i d (ma) drain C source on-resistance r ds(on) ( ? ) co mm on sou rce ta=25 pulse te st v gs =- 1.5 v -2.5v -4 v r ds(on ) - v gs 0 2 4 6 8 10 12 14 16 18 20 0-2-4-6-8-10 gate C source voltage v gs (v) drain C source on-resistance r ds(on) ( ? ) co mm on sou rce i d =- 1m a pulse te st ta=100 25 -2 5
SSM5G06FE 2014-03-01 6 mosfet |yfs| - i d 1 10 100 1000 -1 -10 -100 -1000 drain current i d (ma) forward transfer admittance |yfs| (ms) co mm on sou rce v ds =- 3v ta=25 pulse te st c - v ds 1 10 100 -0.1 -1 -10 -100 drain C s ource volt age v ds (v) capacitance c (pf) common source v gs =0v f =1mhz ta=25 cis s cos s crs s t - i d 10 100 1000 10000 -0.1 -1 -10 -100 drain current i d (ma) switching time t (ns) common source v dd =-3v v gs =0 to -2.5v ta=25 toff tr ton tf p d ? ta ambient temperature ta (c) power dissipation p d (mw) 0 0 100 250 160 40 50 150 200 20 60 80 100 140 120 mounted on fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 0.135 mm 2 5) i dr - v ds 0 50 100 150 200 250 0 0.2 0.4 0.6 0.8 1 1.2 1.4 drain?source voltage v ds (v) drain reverse current i dr (ma) common source v gs =0v ta = 2 5 pulse test
SSM5G06FE 2014-03-01 7 sbd
SSM5G06FE 2014-03-01 8 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be repr oduced without prior written permission from toshiba. even with toshiba's written permission, reproduction is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality a nd reliability, product can malf unction or fail. customers are responsible for complying with safety standards and for provid ing adequate designs and safeguards fo r their hardware, software and systems which minimize risk and avoid situat ions in which a malfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, customers must also refer to and comply with (a) the latest ve rsions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and applicat ion notes for product and the precautions and condi tions set forth in the "toshiba s emiconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications , including but not limited to (a) determining t he appropriateness of the use of this product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other re ferenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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